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Simulation of Resistance Modulation in MOSFETs | ||
| Journal of Engineering and Sustainable Development | ||
| Article 1, Volume 11, Issue 2, 2007, Pages 176-187 | ||
| Author | ||
| Mohammed A. Abdala | ||
| Abstract | ||
| Simulation results for the resistance modulation in metal-semiconductor field effect transistors (MOSFETs) are presented. The numerical simulations show that the resistance fluctuation does increase as the trap area is reduced, passes through a maximum and finally decrease towards zero. The comparison of the simulated results with typical experimental Random Telegraph Signal (RTS) data shows an overall good agreement. | ||
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