- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Static Characteristics of n+-n-p-p+ Silicon IMPATT Diode | ||
| Journal of Engineering and Sustainable Development | ||
| Article 1, Volume 13, Issue 2, 2009, Pages 144-161 | ||
| Author | ||
| Muneer Aboud Hashem | ||
| Abstract | ||
| To optimize device performance, theoretical analysis for static characteristics of ann+-n-p-p+ silicon IMPATT diode with a deep junction from the surface and a diffusedjunction in the n-p layer is presented. The doping profile in the (n) layer is considered to bea Chebyshev orthogonal polynomial form, the diffusion coefficient is concentrationdependent, and the junction depth varies according to the diffusion time. The mostimportant characteristics such as the electric field distribution, potential distribution, andexcess noise factor are treated numerically using Newton's method and the introduction ofMATLAB version 6.1. Furthermore, response speed and the figure of merit, the cw outputpower, are treated. It is found that the electric field and the potential are both increasedwith increasing junction depth because of the increase in both the depletion layer widthand the impurity gradient. The excess noise factor is enhanced with deeper junction sincethe maximum field is in its highest value. The response speed and the output power aredecreasing with wider depletion width and can be enhanced using moderate junctiondepth. | ||
|
Statistics Article View: 118 PDF Download: 12 |
||