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Design and Simulation of 9-11GHz High Power Amplifier Based on Microstrip and Power Combining Techniques | ||
| Journal of Engineering and Sustainable Development | ||
| Article 1, Volume 13, Issue 1, 2009, Pages 33-46 | ||
| Authors | ||
| Sadiq Kamel Gharkan; Talib Mahmood Ali; M. S. Abdul-Wahab | ||
| Abstract | ||
| The aim of this work is the design and analysis of power amplifiers that operate in the microwave band (9-11GHz) within the X-band and used in the terminal stage of solid-state transmitters. The approach of the design and the analysis is entirely S-parameters dependent. Following the choice of a suitable (GaAs MESFET) transistor and investigation of its properties in the required frequency band, a modern computer package (Microwave office 2000, ver.3.22) is used to realize the compatible circuits possessing the desired characteristics.In order to facilitate the achievement of high power transmission, two techniques are used, the Lange coupler and Wilkinson divider. The highest power achieved was 50W. The advantages of the designed amplifier included high power, high gain and gain flatness, good stability circles, low noise figure. The entire design is based on microstrip technology with biasing network having temperature compensation. | ||
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