Thermally Stimulated Currents Technique to Study Traps in Insulators and Semiconductors

Kumar, Ashok; K. Sharma, Sudhir; Yadav, Sarish

	Thermally Stimulated Currents Technique to Study Traps in Insulators and Semiconductors
Iraqi Journal of Applied Physics
Article 1, Volume 11, Issue 2, 2015, Pages 3-12
Authors
Ashok Kumar; Sudhir K. Sharma; Sarish Yadav
Abstract
Defects play an important role in case of semiconductors as their electronic properties are sensitive to the presence of defects and some of these properties are sometimes a direct consequence of this presence. The vast utilization of semiconductors in modern electronics demands an extensive study on the nature of defects present in these semiconducting materials. Amorphous materials are prepared by rapid cooling of the melt or condensing vapors on cold substrate. Due to rapid cooling, various kinds of defects are produced in amorphous materials. The defect density is therefore in general higher in amorphous materials as compared to crystalline materials. Many methods have been used to find out trap parameters in amorphous semiconductors. Most of these methods require junction preparation (Schottky or p-n junction). Due to difficulty in making junctions in amorphous semiconductors, methods which do not require the preparation of junctions, are preferred for studying the trap parameters. Thermally stimulated current method is one of them. The present paper thus reports a review on various methods of analysis for obtaining trap position and density from the measurements of thermally stimulated current in insulators, crystalline semiconductors and amorphous semiconductors.
Keywords
Thermally; stimulated currents; Trap depth; Capture cross; section; Escape frequency

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