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Dark and Illumination Electrical Characteristics of ZnS/Si Heterojunction Prepared by Pulsed Laser Deposition | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 11, Issue 2, 2015, Pages 25-28 | ||
| Author | ||
| Esraa K. Hamed | ||
| Abstract | ||
| In this work, zinc sulfide (ZnS) thin films were deposited on silicon substrates by pulsed-laser deposition (PLD) technique using Q-switched 532nm Nd:YAG laser with pulse repetition rate of 1 Hz. The electrical properties of the formed ZnS/Si heterojunction were investigated at different laser energies (700-1000mJ) and using 21 laser pulses for each sample. The current-voltage (I-V) characteristics of this heterojunction were observed in dark and under illumination and they showed photosensitive nature of this structure. The capacitance-voltage (C-V) measurements were performed to measure the built-in potential of the ZnS/Si heterojunction fabricated in this work. | ||
| Keywords | ||
| Zinc sulfide; Heterojunction; Thin films; Pulsed; laser deposition | ||
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