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Photocurrents Mechanisms And Performance Considerations Of A Reach Through P+-N-N+ Silicon Photodiode | ||
| Journal of Engineering and Sustainable Development | ||
| Article 1, Volume 14, Issue 4, 2010, Pages 1-19 | ||
| Authors | ||
| Fadhil Sahib Hasan; Muneer Aboud Hashem | ||
| Abstract | ||
| The proposed model is a reverse-biased p+-n-n+ silicon photodiode which offers good quantum efficiency and high response speed suitable for photodetectors application. The theoretical analysis of the device is started with the evaluation of the built-in, reachthrough, and breakdown voltages. Photocurrent mechanisms theoretical treatment in each layer of the device are modeled. The effect of the surface recombination velocity and the absorption coefficient on the minority carries distribution in each layer within the device and on the overall device performance is presented. An effective and powerful modeling process of the mathematical foundations of the photodiode is performed with the aid of MATLAB R2008a version 6.5A. It is found that for a low reachthrough voltage, the concentration of the n layer should be reduced, the photocurrents increases as the width of the P+ and n layer increase at a relatively low surface recombination velocity and better absorption coefficient .A good quantum efficiency and high response speed of the photodiode in the wavelength region can be achieved by considering an optimum values of the effecting parameters in the n key layer of the device. | ||
| Keywords | ||
| reachthrough voltage; photocurrent; quantum efficiency; photodiode | ||
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