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Temperature Dependence of AC Conductivity and Complex Dielectric Constant of Cd2Si1-xGexO4 Compound | ||
| Iraqi Journal of Science | ||
| Article 1, Volume 56, Issue 2, 2015, Pages 1409-1415 | ||
| Author | ||
| Salma M. Shaban | ||
| Abstract | ||
| In this work, samples of Cd2Si1-xGexO4 prepared by powder technology for (x = 0, 0.3, 0.6) were studied. The effect of (Ge) additives at different ratio of Ge (x=0, 0.3, 0.6) on the behavior of dielectric constant, dielectric loss and a,c conductivity were measured as a function of temperature at a selected frequencies (0.01 – 10) MHz in the temperature range 298 K to 473 K. The dielectric constant and dielectric loss obtained different behavior with the additives of (Ge). The activation energy for the electrical conduction process was studied. | ||
| Keywords | ||
| Cd alloys; Cd compounds; Si compounds; Powder technology; c conductivity; Dielectric properties | ||
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