A.A.J.Al-Douri, , F. Abd Al Jabbar, N., A. Abdullah, R., F.A. Alias, M. (2015). Thermoelectric power for thermally deposited cadmium telluride films. , 13(26), 38-41.
A.A.J.Al-Douri; N. F. Abd Al Jabbar; R. A. Abdullah; M. F.A. Alias. "Thermoelectric power for thermally deposited cadmium telluride films". , 13, 26, 2015, 38-41.
A.A.J.Al-Douri, , F. Abd Al Jabbar, N., A. Abdullah, R., F.A. Alias, M. (2015). 'Thermoelectric power for thermally deposited cadmium telluride films', , 13(26), pp. 38-41.
A.A.J.Al-Douri, , F. Abd Al Jabbar, N., A. Abdullah, R., F.A. Alias, M. Thermoelectric power for thermally deposited cadmium telluride films. , 2015; 13(26): 38-41.

Thermoelectric power for thermally deposited cadmium telluride films

Iraqi Journal of Physics
Article 1, Volume 13, Issue 26, 2015, Pages 38-41
Authors
; N. F. Abd Al Jabbar; R. A. Abdullah; M. F.A. Alias
Abstract
Thermal evaporation method has used for depositing CdTe films on corning glass slides under vacuum of about 10-5mbar. The thicknesses of the prepared films are400 and 1000 nm. The prepared films annealed at 573 K. The structural of CdTe powder and prepared films investigated. The hopping and thermal energies of as deposited and annealed CdTe films studied as a function of thickness. A polycrystalline structure observed for CdTe powder and prepared films. All prepared films are p-type semiconductor. The hopping energy decreased as thickness increased, while thermal energy increased.
Keywords
CdTe Film; thermal evaporation; structure; See beck effect
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