N.A.Huseen, , Z.T.A, , Dahan, , S.A.Hasson, (2004). Study the influence of Annealing upon electrical properties of The prepared films ZnSe by Thermal evaporation in Vacuum. , 1(2), 253-257.
N.A.Huseen; Z.T.A; Dahan; S.A.Hasson. "Study the influence of Annealing upon electrical properties of The prepared films ZnSe by Thermal evaporation in Vacuum". , 1, 2, 2004, 253-257.
N.A.Huseen, , Z.T.A, , Dahan, , S.A.Hasson, (2004). 'Study the influence of Annealing upon electrical properties of The prepared films ZnSe by Thermal evaporation in Vacuum', , 1(2), pp. 253-257.
N.A.Huseen, , Z.T.A, , Dahan, , S.A.Hasson, Study the influence of Annealing upon electrical properties of The prepared films ZnSe by Thermal evaporation in Vacuum. , 2004; 1(2): 253-257.

Study the influence of Annealing upon electrical properties of The prepared films ZnSe by Thermal evaporation in Vacuum

Baghdad Science Journal
Article 1, Volume 1, Issue 2, 2004, Pages 253-257
Authors
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Abstract
Thin films of ZnSe arc deposited on glass substrates by thermal evaporation in vacuum with different thickness (1000, 2700, 4000) A° temperature (293-373) °K are studies the electrical properties before and after annealing. The result show decrease D.0 conductivity and increasing the activation energy Eat.
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