- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Nanostructure and optical propertes of porous silicon layer | ||
| Kirkuk Journal of Science | ||
| Article 1, Volume 10, Issue 3, 2015, Pages 345-354 PDF (0 K) | ||
| DOI: 10.32894/kujss.2015.105357 | ||
| Authors | ||
| Shihab A. Motar; Falah A-H. Mutlak; Baha T.Chiad | ||
| Abstract | ||
| In this paper nanostructures Porous silicon layers have been prepared by electrochemical etching (ECE) technique of (111) P-type silicon wafer with a solution Electrolytic HF: ethanol at a concentration of 1:2 with various anodization currents and etching time of 20 min. The morphological, structural and optical properties of nanostructure porous silicon were investigated by Atomic Force Microscopy (AFM), X-Ray Diffraction (XRD) and Photoluminescence (PL) respectively. From AFM images, we found that the PS layer has sponge like structure, and average diameter of pore and thickness of PS layer increased with increasing of the anodization currents. X-ray diffraction show that the crystal size was reduced toward nanometric scale, and then a broadening of diffraction peaks (111) was observed. The band gap of the samples was measured through the photoluminescence (PL) peak. | ||
| Keywords | ||
| porous Si; anodization; Electrochemical Etching | ||
|
Statistics Article View: 606 PDF Download: 363 |
||