Hassan, K., Raad, , Emad, , Alwan, H., B, M., Maqadcy, (2010). Structural & Electrical Properties of CdTe/Si Heterojunction Prepared by Flash Evaporation Technique. , 15(63), 61-68.
K. Hassan; Raad; Emad; H. Alwan; M. B; Maqadcy. "Structural & Electrical Properties of CdTe/Si Heterojunction Prepared by Flash Evaporation Technique". , 15, 63, 2010, 61-68.
Hassan, K., Raad, , Emad, , Alwan, H., B, M., Maqadcy, (2010). 'Structural & Electrical Properties of CdTe/Si Heterojunction Prepared by Flash Evaporation Technique', , 15(63), pp. 61-68.
Hassan, K., Raad, , Emad, , Alwan, H., B, M., Maqadcy, Structural & Electrical Properties of CdTe/Si Heterojunction Prepared by Flash Evaporation Technique. , 2010; 15(63): 61-68.

Structural & Electrical Properties of CdTe/Si Heterojunction Prepared by Flash Evaporation Technique

journal of the college of basic education
Article 1, Volume 15, Issue 63, 2010, Pages 61-68
Authors
K. Hassan; ; ; H. Alwan; M. B;
Abstract
The present study is on the optoelectronic properties of CdTe/Si heterojunction photodetector made by deposition of CdTe by flash evaporation technique on clean monocrystalline phase of Si. Electrical and structural properties of grown CdTe film were investigated. The CdTe/Si junction exhibits fair diode rectification and the soft breakdown occurred at VB>2 V. Dark I–V characteristics of the CdTe/Si photodetector are examined at room temperature.
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