Characterization of (CdO)1-x(ZnO)x Thin Films Prepared by Pulsed-Laser Deposition for Solar Cell Applications

H. Mohammed, Ghuson

	Characterization of (CdO)1-x(ZnO)x Thin Films Prepared by Pulsed-Laser Deposition for Solar Cell Applications
Iraqi Journal of Applied Physics
Article 1, Volume 11, Issue 3, 2015, Pages 3-7
Author
Ghuson H. Mohammed
Abstract
In this work, thin films from (CdO)1-x(ZnO)x compound were deposited onto p-type silicon substrates by pulsed-laser deposition technique at room temperature with different concentrations of ZnO of (0.0, 0.05, 0.1, 0.15 and 0.2wt.%). A pulsed Nd-YAG laser with wavelength of 1064 nm, pulse energy of 500 mJ and 500 shots was used. The crystalline structures and morphologies of the prepared films were investigated by x-ray diffraction (XRD) patterns and atomic force microscopy (AFM) analysis, respectively. AFM analysis showed that the film surface became rougher when the ZnO concentration was increased. The current–voltage characteristics of (CdO)1-x(ZnO)x/Si heterojunctions showed that the forward current at dark condition approximately varies exponentially with the applied voltage. A photovoltaic device based on these heterojunctions showed a short-circuit current density of 3.1 µA and open circuit voltage of 3 V at x=2%.
Keywords
Heterojunction; Thin films; Pulsed; laser deposition; Solar cells

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