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Theoretical Comparison of the Dynamical Behavior between Bulk and SQW GaAs/AlGaAs Laser with pumping of Nd: YVO4 Crystal | ||
| journal of the college of basic education | ||
| Article 1, Volume 14, Issue 62, 2010, Pages 111-124 | ||
| Author | ||
| Duha S.A | ||
| Abstract | ||
| In this work, a theoretical comparison was made for the dynamical behavior of the bulk and SQW GaAs/AlGaAs lasers, in which the peak modal gain and threshold current density are studied with varying the active region thickness d=(0.02to 0.3)μm at two reflectivities of (R=0.32 and0.8) and the well widths Lz=(200, 150, 100, and 75) Ǻ for the SQW laser, both at a bandgap discontinuity of ΔEc of 0.1 eV and at a temperature of T=300oK.It was found that the highest value of bulk laser of the peak modal gain is gmax=240 cm-1 and that the increasing of the facet reflectivity will be minimized the value of the threshold current density, while increasing the value of the thickness of the active region at fixed reflectivity will result in an increase in the value of the threshold current density, while for the SQW laser it was found that the highest value of the peak modal gain gmax=400 cm-1 is achieved at Lz=75 Ǻ, the lower value to achieve transparency Ntr=0.5×1018 cm-3 at Lz=200 Ǻ, and that the optimum value for QW width to achieve the lower threshold current density Jth=481.5 A/cm2 at the same injected carrier density is Lz=100 Ǻ.In the experimental work as an application 808 nm (2Watt) bulk and 810 nm (1Watt) QW laser used as pumping sources to a Nd:YVO4 Disk crystal with dimensions of (4*5*1 mm) with an output coupler with 90% reflectivity, and ROC=400mm using V-shape technique. From the experimental work the optimum resonator length was found to be 14.5 cm which achieves a maximum output power of 58 mW, with a slope efficiency of 11.3%, using bulk diode laser the efficiency was found to be 3.2%, with a maximum output power of 29 mW, this draws us to the fact that QW laser source is more efficient and suitable for pumping solid state media.Keywords: GaAs/AlGaAs diode laser, Peak gain, Threshold current density, Diode pumping, Nd:YVO4, Face pumping. | ||
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