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Effect of the Cd Concentration on the Characteristic Parameters of Znx¬-1CdxS Thin Films Developed by Thermal Evaporation Method | ||
| journal of the college of basic education | ||
| Article 1, Volume 14, Issue 62, 2010, Pages 95-104 | ||
| Author | ||
| Tariq J. Alwan | ||
| Abstract | ||
| The Zn1-xCdxS alloys were prepared in evacuated quartz tubes by the method of melt quenching. The Zn1-xCdxS thin films prepared by thermal evaporation method and at different value for x, (x= 0.0, 0.1, 0.2, 0.3, 0.4 and 0.5). X-Ray diffraction technique was used to study the structure of this films and the effect of x value on it . X-ray diffraction analysis confirmed that these films are polycrystalline structure nature having f.c.c , and lattice parameters are reported.The most preferential orientation is along [111] direction for all deposited films. The lattice parameter, grain size, microstrain, dislocation density in the film are calculated and correlated with x.D.C conductivity has been found that there are two stages of conductivity throughout the heating temperature range for polycrystalline films, The D.C conductivity of the as deposited films increases as x increased. Optical energy gap of vacuum evaporated thin films in the Zn1-xCdxS system were calculated from absorptions spectra. It is found that the films exhibit allowed indirect transitions gap which decrease with increasing Cd content. The relationship between the tail width and Cd composition in Zn1-xCdxS is calculated for each prepared films. | ||
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