- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Nanostructure NiO films prepared by PLD and their optoelectronic properties | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 33, 5B, 2015, Pages 951-959 PDF (323.2 K) | ||
| DOI: 10.30684/etj.33.5B.19 | ||
| Authors | ||
| Doaa S. Jbaier1; Jehan A. Simon2; Khawla S. Khashan3 | ||
| 1University of Technology, Department of Applied Science/ Baghdad Email:[email protected] | ||
| 2University of Technology, Department of Applied Science/Baghdad, | ||
| 3University of Technology, Department of Applied Science/ Baghdad | ||
| Abstract | ||
| NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser. Structure, grain size and optical properties have analyzed by using FTIR, AFM and UV-VIS spectroscopy. FTIR spectra conformed of NiO bonding. AFM images show the particle size about ~66nm. The optical transmission results premiered the transparency of the NiO films is greater than 70% in the visible region with optical band gap 3.85eV. The current voltage characterization of NiO/Si heterojunction has good rectifying. | ||
| Keywords | ||
| NiO thin film; Photodetector; Characterization of NiO | ||
|
Statistics Article View: 377 PDF Download: 268 |
||