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Effect of Zinc Ion Concentration on Structure, Electrical and Optical Properties of ZnO Prepared by CBD | ||
| journal of the college of basic education | ||
| Article 1, Volume 15, Issue 66, 2010, Pages 99-108 | ||
| Author | ||
| Abbas F. Sabbar Al-Shareefi | ||
| Abstract | ||
| Effect of zinc ion concentration of ZnO thin films, prepared by using chemical bath deposition technique, is discussed. ZnO films were characterized using different techniques such as X-ray diffraction (XRD), electrical resistivity measurement, and optical absorption and transmission. The XRD analysis showed that all the films had a preferred (002) orientation. The ZnO films showed, on average 20% reflectance, the transmittance range between 35% and 45% for different morality before annealing. Optical band gap decreases with increasing zinc ion concentration. Linear increase in resistivity with increasing in molarities was shown. The films were annealed at 473 K and showed decreases in the reflectance of the films, but transmitting increase to 75% - 80%. Therefore by annealing process the hydroxide phase converted to the oxide phase. The annealed samples show a relative decrease in band gap with annealing. Key wards: chemical bath deposition, ZnO films, zinc ion concentration effect, annealing effect, structure properties, electrical properties, and optical properties. | ||
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