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THE INFLUENCE OF HEATING TREATMENT ON PHYSICALPROPERTIES OF POROUS SILICON | ||
| Journal of Al-Nahrain University - Science | ||
| Article 1, Volume 12, Issue 2, 2009, Pages 76-81 | ||
| Authors | ||
| Narges Z.Abd alzahra; Alwan M.Alwan | ||
| Abstract | ||
| In this work we studying the effect of thermal treatment on the electrical and conduction properties of metal /porous silica /n-si /metal prepared by photo electro chemical etching for etching time (15 min. Oxidation occur in oxidation time (15-150)sec at 750Ċ.After investigated current–voltage (J-V)measurement we found increase in rectification ratio ,barrier height increase with oxidation time, the rectification ration was 5 before oxidation will be 21 after 30 s oxidation time, barrier height value was (0.756eV) will be( 0.85eV) at oxidation time 30 s ,the ideality factor after oxidation was 15 will be 2.75 at 30 sec of oxidation time mean that the device approach from the ideality characteristics. | ||
| Keywords | ||
| Porous Silicon; photo electrochemical; rapid thermal oxidation | ||
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