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THE EFFECT OF THICKNESS ON DC CONDUCTIVITY AND OPTICALENERGY GAP OF (A–GE ) THIN FILM | ||
| Journal of Al-Nahrain University - Science | ||
| Article 1, Volume 12, Issue 1, 2009, Pages 68-72 | ||
| Authors | ||
| Talib Saloom Hamadi; Izzat M. Al-Essa | ||
| Abstract | ||
| The films of amorphous germanium (a–Ge) were prepared by thermal evaporation under high vacuum conditions (10-6 ) torr. The influence of various thickness (1000–5000 ) Ǻ on the d.c electrical conductivity (σRT) at 303K and optical energy gaps (Eg) of (a – Ge ) was studied. The temperature dependence of conductivity for various thickness recorded in the range (303–503) K consisted of two regions, medium and high temperature regions. It's found that the results of the energy gap decrease from 1.05 eV to 0.86 eV.as the thickness increase from 1000 Ǻ to 5000 Ǻ respectively while d.c conductivity (σRT) increase from 3.0510-4(Ω.cm)-1 to 2.209103 (Ω.cm)1 respectively with the same variation of thickness. | ||
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