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MEASUREMENT OF DIFFUSION LENGTH IN P-N JUNCTIONSILICON SOLAR CELL | ||
| Journal of Al-Nahrain University - Science | ||
| Article 1, Volume 11, Issue 1, 2008, Pages 59-63 | ||
| Authors | ||
| Oday N. Slman; Jehan E. Simon; Rana O. Mahdi | ||
| Abstract | ||
| In this work, p-n junction silicon solar cells were fabricated using Plasma-assisted deposition technique, The minority-carriers diffusion length in the base region of a silicon solar cell has been determined by measuring the short-circuit current as a function of the wavelength of incident light. The incident light intensity required to produce a given short-circuit current is a linear function of the reciprocal absorption coefficient for each wavelength. and the extrapolation of this relation to zero intensity yields the diffusion length. The accuracy of this method appears to be greatly accepted. | ||
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