- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
A Computer Simulation Study of Sputtering Yield of GaAs Target Bombarded by Argon Ions | ||
| Diyala Journal For Pure Science | ||
| Article 1, Volume 11, Issue 4, 2015, Pages 132-141 | ||
| Authors | ||
| Rafah I. Nori; Firas M. Hady; Mustafa K. Jassim; Huda M. Tawfeek | ||
| Abstract | ||
| Sputtering yield behaviour of GaAs target bombarded by Argon ions plasma is studied through the reduction of TRIM ( Transport of Ions in Matter ) simulation data . The angular dependence of normalized sputtering yield of GaAs is studied. Further the effect of increasing ion energy, the effect of increasing ion numbers , the influence of GaAs width, and the effect of changing the surface binding energy of elements composed GaAs target upon the sputter yield are studied. It was found that the entire parameters mentioned have very strong effects on the sputtering yield of GaAs. | ||
| Keywords | ||
| sputtering yield; TRIM; Argon ions; GaAs | ||
|
Statistics Article View: 114 PDF Download: 73 |
||