PREPARATION OF B-T-S SEMICONDUCTORS BY USING SOLID STATE REACTION AND STUDYING ITS STRUCTURAL AND PHYSICAL PROPERTIES

Fuad Khairy, Ali; Hamdi Rzej, Khalid; Hameed Mahdi Al-Saraf, Abdul

	PREPARATION OF B-T-S SEMICONDUCTORS BY USING SOLID STATE REACTION AND STUDYING ITS STRUCTURAL AND PHYSICAL PROPERTIES
Tikrit Journal of Pure Science
Article 1, Volume 21, Issue 4, 2016, Pages 137-142
Authors
Ali Fuad Khairy; Khalid Hamdi Rzej; Abdul Hameed Mahdi Al-Saraf
Abstract
In this study, the ceramic compound BaTi(1-x)SnxO3 was prepared at (x=0, 0.05, 0.1, 0.15, 0.2) and doped with SiO2 and Y2O3 for all concentrations by using solid state reaction at 1150 oC and sintering time of 6h. Structural properties were studied before and after adding SiO2 and Y2O3 by using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy dispersive X-ray (EDX). It is found that the compound BaTi(1-x)SnxO3 has tetragonal structure for all concentration except at (x=0.2) which has cubic structure. After adding SiO2 and Y2O3, the peaks height was increased especially at (110). Physical properties were studied before and after adding SiO2 and Y2O3 by measuring density, porosity and absorbency. It is found that the density was increased while the porosity and absorbency were decreased as concentration increased. The electrical properties were studied such as alternate electric conductivity, dielectric constant and dielectric loss coefficient. It is found that the alternate electric conductivity was increased as frequency increased and the highest value of dielectric constant at frequency (100 Hz) and (x=0.05) after adding SiO2 and Y2O3 was (0.301). It is clear that the adding of SiO2 and Y2O3 enhanced the dielectric properties of BaTi(1-x)SnxO3.

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