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Morphology of prepared Porous Silicon via Electrochemical Etching | ||
| Al-Mustansiriyah Journal of Science | ||
| Article 1, Volume 19, Issue 5, 2008, Pages 22-29 | ||
| Author | ||
| Oday A. Abbas | ||
| Abstract | ||
| Porous silicon (P-Si) layers have been prepared in this work via electrochemical (EC) processes of p-type silicon wafers in hydrofluoric (HF) acid of 24.5 % concentration. Some of preparation's conditions such as (etching time, current density have been changed during etching process to study the effect of these parameters on surface morphology of prepared P-Si layers. | ||
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