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Synthesis of Al/OPS/PS/Si/Al by RTO and its detection properties | ||
| Journal of College of Education | ||
| Article 1, Volume 0, Issue 1, 2017, Pages 129-138 | ||
| Abstract | ||
| Porous silicon oxide (PSO) was prepared by rapid-thermal oxidization (RTO) of porous silicon that was formed on silicon substrate with optimum conditions. The porosity was approximately (65%) and layer thickness was (8μm). Photoluminescence (PL) observed a broad peak of porous silicon (PS) at 690 nm (1.79eV) with full width at half maximum (FWHM) of about 130 nm while the photoluminescence value of PSO located at 670 nm (1.85eV) with FWHM value of 140 nm. The lower values of resistances are 95.8 kΩ and 18kΩ of PSO and PS respectively. Response time of porous silicon detector about (9) second and the recovery time is about (6.5) second. The response time of UV detector for porous silicon oxide is (4) second and the recovery time about (8) second. The (PSO) sample exhibited high detection for incident ultra-violet (UV) light with and without bios | ||
| Keywords | ||
| porous silicon; Porous silicon oxide; Rapid; thermal oxidation; UV Photo detector | ||
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