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Effect of thickness on the structure, morphology and A.C conductivity of Bi2S3 thin films | ||
| Iraqi Journal of Physics | ||
| Article 1, Volume 15, Issue 33, 2017, Pages 87-95 | ||
| Authors | ||
| Bushra A. Hasan; Hiba H. Issa | ||
| Abstract | ||
| Thin films samples of Bismuth sulfide Bi2S3 had deposited on glass substrate using thermal evaporation method by chemical method under vacuum of 10-5 Toor. XRD and AFM were used to check the structure and morphology of the Bi2S3 thin films. The results showed that the films with law thickness <700 nm were free from any diffraction peaks refer to amorphous structure while films with thickness≥700 nm was polycrystalline. The roughness decreases while average grain size increases with the increase of thickness. The A.C conductivity as function of frequency had studied in the frequency range (50 to 5x106 Hz). The dielectric constant, polarizability showed significant dependence upon the variation of thickness. | ||
| Keywords | ||
| Dielectric properties; Bismuth Sulfide; Semiconducting Materials | ||
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