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Stress Management and Interfacial Strength of Gallium Nitride Layer Grown on Diamond Substrate | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 13, Issue 2, 2017, Pages 19-22 | ||
| Author | ||
| A.R. Sing | ||
| Abstract | ||
| In this work, the stress management and interfacial strength of gallium nitride layer grown on diamond substrate, as well as homogeneous interfacial thermal properties across the wafer, have been achieved. These results on such material systems are highly important for reliable high-power electronics based on this material system, such as high electron mobility transistors. | ||
| Keywords | ||
| GaN; Stress management; Interfacial strength; Wafer mapping | ||
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