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Surface Recombination Velocity of the LPE Grown P (Al.86 Ga.l4 As) -P (GaAs)-N (GaAs) Solar Cells | ||
| journal of al-qadisiyah for pure science(quarterly) | ||
| Article 1, Volume 12, Issue 2, 2012, Pages 74-81 PDF (0 K) | ||
| Author | ||
| A. K. Farhood | ||
| Abstract | ||
| Photolumincsccncc (PL) measurements were earried out on Liquid-phase epitaxy (LPE) grown P(A1.86Ga.14As)-P(GaAS)-N(GaAs) solar cells in the temperature range 10-350K.By the PL measurements analysis and using a simple theoretical model, we evaluate the surface recombination velocity at the GaAs p-n junction surface as a function of temperature. Our results indicate that surface recombination is not playing an important role in the heterojunction device , and show that the surface recombination velocity at the (GaAs) p-n junction surface is proportional to Exp (-Ea/KT) with activation energies Ea of 3.5 meV to 13 meV in the temperature range studied. | ||
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