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Effective ZnO Doping by pulsed laser deposition to Improve the efficiency of the solar cells of TiO2at 200 C0 | ||
| journal of kerbala university | ||
| Article 1, Volume 13, Issue 3, 2017, Pages 63-68 PDF (0 K) | ||
| Author | ||
| Batool Gabbar Obeid | ||
| Abstract | ||
| In this research was prepare TiO2: ZnO have been deposited on the glass substrates by the pulsed lasertechnique,the use of Nd:YAG laser with wavelength (1064)nm and energy 600mJand have been deposited with different concentration(0.03,0.05,0.07,0.1)% of ZnO at annealing temperature 200 C0with thickness (400 nm). The TiO2thin films showed n-type conductivity, according to Hall measurements, the carrier concentration of TiO2 thin films had increasedfrom (18.5× 1010 to 45.16× 1010 cm−3). The average absorbance value of TiO2 thin films was improved from (3.412*10-6to 8.654*10-6)by the doping of ZnO., These improved properties should contribute to the efficiency of the photovoltaic effect of the photogenerated charged carriers. The( I-V) characteristic of (Al / TiO2: ZnO /n-Si / Al) heterojunction show that the solar cell which is produced at X=0.1% by efficiency (η) =8.769 | ||
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