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Effect of Diffusion Temperature on the some Electrical Properties of CdS:In Thin Films Prepared by Vacuum Evaporation | ||
| Baghdad Science Journal | ||
| Article 1, Volume 14, Issue 4, 2017, Pages 793-796 | ||
| Authors | ||
| ; a F. al-Taay | ||
| Abstract | ||
| CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased. | ||
| Keywords | ||
| Thermal diffusion; electrical properties; Activation Energy; concentration; mobility | ||
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