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BARRIER HEIGHT AND CHANGING INSULATOR THICKNESS OF THIN FILM MIS JUNCTIONS | ||
| Journal of University of Anbar for Pure Science | ||
| Article 8, Volume 10, Issue 3, 2016, Pages 35-40 PDF (669.52 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.37652/juaps.2016.135153 | ||
| Author | ||
| JassimMohammed Salih* | ||
| University Of Anbar - College of Science | ||
| Abstract | ||
| Using thermal evaporation, metal-semiconductor and metal-insulator-semiconductor thin-films were prepared. By using experimental I-V and activation energy measurements, it was determined that barrier height ( ) increases as the thickness of the insulator increases. | ||
| Keywords | ||
| BARRIER HEIGHT; INSULATOR THICKNESS; THIN FILM MIS | ||
| References | ||
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