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Thermal Annealing effect on CdS/Si/ Heterojunction properties | ||
| Journal of College of Education | ||
| Article 1, Volume 1, Issue 3, 2017, Pages 239-250 | ||
| Author | ||
| Amer shaker Mahmood | ||
| Abstract | ||
| Cadmium sulphide (CdS) nanoparticles have been successfully synthesized by a Thermal Evaporation Technique. CdS thin films having around 100 nm thickness annelid at (200 and 300) oC which deposited on glass substrates. The study of X-ray diffraction investigated all the exhibit polycrystalline nature .Thin film’s internal structure topographical and optical properties. Furthermore, the crystallization directions of CdS (002) can be clearly observed through an X-ray diffraction analysis XRD, Atomic Force Microscope AFM (topographic image) showed that the surface Characteristics , thin films crystals grew with increases in either the annealing temperature, also , the grain size increased in rangefrom 88.4 nm to 96.5 nm. The optical properties concerning the absorption and transmission spectra were studies for prepared thin films. UV-Vis measurement spectra showed that Vis transmittance intensity decreased with increases annealing temperature, the energy band gap decreased from (2.2to 2.4) eV when the annealing temperature. Heterojunction characterization showed that the films are semiconducting and can be used in solar cell devices. | ||
| Keywords | ||
| CdS; optical energy gap; grian size; transmittance | ||
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