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Electrical Properties of (CdO)1-x(SnO2)xThin Films Prepared by Pulsed Laser Deposition | ||
| Albahir journal | ||
| Article 1, Volume 5, Issue 9, 2017, Pages 21-30 | ||
| Authors | ||
| Mohammed A. Abdul Majeed; Nahida B. Hasan; Ghusson H. Mohammed and | ||
| Abstract | ||
| CdO thin films have been deposited at different concentration of SnO2 x= (0.0, 0.05, 0.1, 0.15) and (0.2) Wt. % onto glass substrates by pulsed laser deposition technique (PLD) using Nd-YAG laser with λ=1064 nm, energy= 600mJ and number of shots= 500. For it polycrystalline, the D.C. conductivity for the (CdO)1- x(SnO2)x thin films decreases with increasing concentration SnO2 and decreases with increasing of annealing temperature, found two activation energies increases with increasing concentration SnO2 and decreases with increasing of annealing temperature. Hall effect measurements show that the (CdO)1-x(SnO2)xthin films were n-type, concentration of charge carriers nH decreases with increasing of concentration of SnO2, also charge carriers nH increases with increasing of annealing temperatures, while the mobility μH opposite behavior. | ||
| Keywords | ||
| CdO; Sno; Pulsed laser deposition | ||
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