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Effects of Number of Wells and Cavity Length in Limitation the Optimum Symmetric Multiple Quantum Well Laser | ||
| Almuthanna Journal of Pure Science (MJPS) | ||
| Article 1, Volume 2, Issue 1, 2014, Pages 0-0 | ||
| Author | ||
| Maysam Tariq Al-Obaidi | ||
| Abstract | ||
| In this research several main parameters/factors that effect on each of structures of semi-conductor lasers have been investigated. This investigation depends mainly on two procedures : (1) A classification for these parameters including each of threshold current density, injecting threshold carrier density, absolute threshold current density and their relations with each of number of wells and cavity length.(2) A simulation process for the previous parameters with variable values of number of wells and cavity length. Non ideal contribution to the total output current like Auger recombination, Interface recombination and Leakage recombination have also been estimated through the simulation process. In other words, this research is devoted to specify the optimum performance of multi-quantum well structure of semi-conductor laser. The calculations were performed for a representative separate confinement (MQW) laser structure in GaAs/AlGaAs system of: 7.5nm as a QW size, 250 nm as a thickness of the waveguide region and 8nm as a barrier size. | ||
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