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The Effect of Al Doping on Structural, Electrical and Optical Properties of CdSe Films | ||
| Rafidain Journal of Science | ||
| Article 17, Volume 27, Issue 2, 2018, Pages 164-172 PDF (890.38 K) | ||
| DOI: 10.33899/rjs.2018.145400 | ||
| Authors | ||
| Suha A. Najim; Nawfal Y. Jamil | ||
| Abstract | ||
| CdSe thin films were deposited on glass substrates by chemical bath deposition technique. The deposited CdSe thin films were annealed by thermal evaporation for (1h) at 250 ˚C. The samples were then coated with a different thicknesses of thin Al films (50, 100, 150, 200) Å by thermal evaporation method which then annealed at (1h,250˚C). The structural, optical, and electrical properties of deposited and doped samples were studied. The X-ray diffraction analysis showed that the films have polycrystalline structure of hexagonal type. From optical properties, the band gap energy of undoped CdSe thin film was 2 eV and it is decreased by increasing of Al doping. Electrical resistivity of the doped films showed a decrease with the increase of the Al concentration. The doped and undoped samples revealed that the conductivity was n-type | ||
| Keywords | ||
| CdSe thin film; Al doping; Optical Properties; semiconductor | ||
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