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Effect of γ- Irradiation on the n- Porous Silicon Structures Prepared by Electrochemical Etching | ||
| Rafidain Journal of Science | ||
| Article 18, Volume 27, Issue 2, 2018, Pages 173-180 PDF (844.11 K) | ||
| DOI: 10.33899/rjs.2018.145402 | ||
| Author | ||
| Abdulkahlig A. Sulaiman | ||
| Abstract | ||
| Porous Silicon has been prepared by using electrochemical cell at room temperature with etching time (20 min), current (30 mA) and fixed electrolyte solution HF:C2H5OH(1:4). The samples are irradiated by γ-ray with various doses (50,100) Gy. Several techniques such as scanning electron microscope (SEM), X-ray diffraction (XRD) and Ramman Spectrum were used to study the influence of the γ- irradiation of porous silicon (PSi). SEM images show the random distribution of pores that cover all the surface which have different sizes and spherical shapes. XRD analysis, which indicated that n- type porous silicon and the samples irradiated at 50 and 100 Gy of γ- ray grow in hexagonal structure having preferred orientation along (002) plane in c-direction. An extremely symmetric band shape were recognized from Raman spectra of PSi | ||
| Keywords | ||
| PSi; irradiation; XRD; SEM | ||
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