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Structural and electrical properties of CdS &CdS:Sb thin films prepared by flash evaporation technique | ||
| Albahir journal | ||
| Article 1, Volume 6, Issue 11, 2017, Pages 25-32 | ||
| Author | ||
| Ammar S. Hameed | ||
| Abstract | ||
| CdS alloy used to prepareCdS and CdS doped Sb (3%) (CdS:Sb) filmsby flash evaporation technique with thickness (150) nm on glass substrate at room temperature. The effect ofdoping and the annealing temperature at (373 and 473) K for (60) min on the structural and electrical propertieshas been described. The XRD studies show that theannealed film at (373) K has amorphous structure and alters to the polycrystalline at )473(K where the CdS film growth to hexagonal structure with perfect orientation (002) and CdS:Sb growth to cubic structure with perfect orientation (111). From D.C conductivity the variation of activation energies (Ea1,Ea2) and D.C conductivity at room temperature were measured.It is found that Ea2 values decreasing for doped films and increase with increasing annealing temperature (Ta ) for all film. Hall Effectshows that all films are n-type, carrier's concentration decrease with increasing of annealing temperature while Hall mobility increases. Carrier’sconcentration and Hall mobility increases after adding the doped material (Sb) to the CdS films. | ||
| Keywords | ||
| CdS; flash evaporation technique | ||
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