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Effect of Temperature on Silicon Carriers Mobilities Using MATLAB | ||
| Al-Mustansiriyah Journal of Science | ||
| Article 1, Volume 28, Issue 3, 2017, Pages 214-219 | ||
| Author | ||
| Saad N. Ibrahim | ||
| Abstract | ||
| The effect of temperature on the electron and hole mobilities in silicon is studied using MATLAB. A theoretical study has been used for the electrons mobility and holes in silicon. The resulting data allows one to obtain the electron mobility and the hole mobility as a function of doping concentration and continuous temperature range between (200-550 K). | ||
| Keywords | ||
| Carrier Mobilities; Doping Concentration; Hole Mobility; Electron Mobility | ||
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