Annealing effect on the structural and Morphological properties of Organic Semiconductor Alq3:C60 blend Thin Films

Kh. Abbas, Lamiaa; N. Noori, Husham; F. Abdulameer, Ameer

	Annealing effect on the structural and Morphological properties of Organic Semiconductor Alq3:C60 blend Thin Films
Iraqi Journal of Science
Article 1, Volume 59, Issue 3, 2018, Pages 1253-1264
Authors
Lamiaa Kh. Abbas; Husham N. Noori; Ameer F. Abdulameer
Abstract
In this work, has been a studied the effect of thermal treatment using different annealing temperatures (373, 423 and 473) K in vacuum on structural and morphological properties of organic semiconductor Alq3:C60 thin films which are prepared by the spin coating on a glass, silicon and porous silicon. These films have been coated on substrates with speed of 2000 rpm. The structure properties of Tris(8-hydroxyquinoline) aluminum (III) (Alq3) and fullerene (C60) (100:1) and (100:10) blend as-deposited and treated have been studied by X-ray diffraction (XRD) for glass only and morphological properties by Atomic Force Microscope (AFM) for silicon and porous silicon substrates. The results of XRD pattern shows that the structure of (Alq3:C60) as-deposited and annealed thin films are polycrystalline in nature for both mixed weight ratio. The result of AFM measurements show that grain size increase is due to the increases of surface energy at high temperature. Surface roughness increasing and decreased randomly with the temperature can be attributed to the random distributions of the grains and also due to the phase change.
Keywords
Organic Semiconductors; Alq; Morphological Properties and heat treatment; porous silicon; roughness average; s roughness and average diameter

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