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Study of induced defects for silicon single crystal by pulse LaserNd – YAG irradiation | ||
| Journal of University of Anbar for Pure Science | ||
| Article 29, Volume 2, Issue 2, 2008, Pages 159-168 PDF (2.07 M) | ||
| Document Type: Research Paper | ||
| DOI: 10.37652/juaps.2008.15321 | ||
| Authors | ||
| Abdul-Kareem H.Assaf1; Ibrahim J.Abdullah2; Maroof J. Rabee1; Asmat R.Abdulgaffor* 1 | ||
| 1college of Science - Department of Physics | ||
| 2College of Education - Department of Physics | ||
| Abstract | ||
| The Laser interaction with the semiconductor (si) is very important operations which are so important in Laser industrial applications. For this interaction the effected mechanical of induced diffusion which connected in this work of detectors during the optical properties for the semiconductor. This study showed that the defects happening in single crystal of silicon kind-n. Irradiation by Laser Nd-YAG with wave length (1.06μm) and pulse duration (10ms) which conclude defects as (cracks, concaves, convexes and holes) forms and depending on radiation power where optical microscope was used for this purpose. The result of the diffraction of x-ray showed a phase change from single crystal to ( poly crystalline and amorphous) when using the radiation in period power (1.4kw , 0.75kw) consecutively. Also the surface resistance and the penetration depth were found proportional to increasing of the radiation power. | ||
| Keywords | ||
| YAG | ||
| References | ||
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