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Measure of Thermoelectric Power of CdSe Thin Films that Prepared with Different Depositions Rate. | ||
| Journal of University of Anbar for Pure Science | ||
| Article 31, Volume 3, Issue 1, 2009, Pages 103-107 PDF (151.31 K) | ||
| DOI: 10.37652/juaps.2009.15466 | ||
| Author | ||
| Raad Saedon Sabri | ||
| Abstract | ||
| In this paper CdSe thin films have been prepared deposited on galas substrate by thermal evaporation technique at thickness 250 nm with different depositions rate ( 0.2,0.4,0.6,0.8,1,1.2) nm/s and substrate temperatures ( Ts) (300,373,423,473)K . Thermoelectric power were measured to this films ,Seebak coefficient and activation energy were evaluated, the results shows that all films were of n-type conductivity and activation energy increases with dispositions rate and substrate temperature films prepared at 0.8 nm/s with 425 K and 1.2 nm/s with Ts (425 ,475 ) K , except that they were of p-type conductivity . | ||
| Keywords | ||
| CdSe | ||
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