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Calculate the energy levels of vanadium V2+-grafted semiconductor GaAs using the theoretical orthogonal compliant model | ||
| Journal of Education and Science | ||
| Article 17, Volume 18, Issue 1, 2006, Pages 66-78 PDF (625.29 K) | ||
| DOI: 10.33899/edusj.2006.162866 | ||
| Authors | ||
| Adnan M. Al-Shekh; Ibtisam Y. Abdullah | ||
| Abstract | ||
| To evaluate the energy level for Vanadium ion in GaAs: V2+ the ground term has determined (4F). Using the concepts of isomorphism on orbital states for the ground term of GaAs: V2+ where the states are described by fictitious orbits of L'=0, T=1/2 & L'=1, the matrix elements for spin Hamiltonion and effective Hamiltonion are calculated and comparing /J,M,/ and /Mi, Ms/ for J=5/2, L'=1&S=3/2. Our results shows that V2+ displacement affected by e and t2 vibrational modes with T * e and T* t2 Jahn Teller effect rather than T*(t2+e) Jahn Teller effect | ||
| Keywords | ||
| vanadium V2+; GaAs; Jahn Teller effect; Hamiltonion | ||
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