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Pressure and Temperature Dependence of Energy Gap in SiC and Si1-xGex | ||
| Rafidain Journal of Science | ||
| Article 7, Volume 28, Issue 4, 2019, Pages 53-61 PDF (675.9 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.33899/rjs.2019.163296 | ||
| Authors | ||
| Adnan M. Al-sheikh* 1; Mumtaz M. Hussien2; Siham J. Abdullah3 | ||
| 1Department of Physics\ College of Science\ University of Mosul | ||
| 2Department of Physics\ College of Education for Pure Science \ University of Mosul | ||
| 3Department of Radiology\ Alnoor University College | ||
| Abstract | ||
| The effect of pressure on energy gap for IV-IV compound SiC and Si1-xGex alloy have been investigated and evaluated by using Birch-Murnaghan equation of state (EOS) and Bardeen equation of state. Ambiguity in the effect of pressure and temperature on Eg of different SiC polytypes (3C, 4H, 6H) have been investigated and attributed. Variation of Eg in Si1-x Gex evaluated and an interpretation, for it, has been suggested. | ||
| Keywords | ||
| IV-IV compounds; Energy gap; High Pressure; Si1-xGex alloy; SiC pollytypes | ||
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