Study the Effect Thiourea Concentration to (Cu2S/Si) Heterojunction Photodetector by Chemical Bath Deposition (CBD)

Muhammed, Ali M.; Ibrahim, Abdulmajeed E.; Ismail, Raid A.

doi:10.32894/kujss.2019.14.3.15

	Study the Effect Thiourea Concentration to (Cu2S/Si) Heterojunction Photodetector by Chemical Bath Deposition (CBD)
Kirkuk Journal of Science
Article 1, Volume 14, Issue 3, 2019, Pages 209-228 PDF (1.6 M)
Document Type: Research Paper
DOI: 10.32894/kujss.2019.14.3.15
Authors
Ali M. Muhammed^* ¹; Abdulmajeed E. Ibrahim¹; Raid A. Ismail²
¹Department of Physics, College of Pure Science, Tikrit University, Tikrit, Iraq.
²Department of Applied Science, University of Technology, Baghdad, Iraq
Abstract
The effect of the preparation conditions was studied by changing the molar concentration (M) for thiourea [CS(NH2)2] (0.6, 1, 1.3, 1.6 mol) On the Performance of (Cu2S/Si) photodetector which Prepared by (CBD) technique. The photovoltaic properties of the detector, which included the study of the characteristics of current-voltage in the case of darkness and using the forward bias and reverse bias at the rated voltages from -5 to +5V, The (Cu2S/Si) heterojunction is an asymmetric; the figure of merit (Ф) of the films was calculated as a function of molar concentration, The linear characteristics of the (Cu2S/Si) heterojunction were studied. The properties of the applied photodetector were studied, by The responsivity (Rλ) of all photodetectors which exhibits two peaks of response, the maximum responsivity was about 2.06A/W at 450nm and 2.13A/W at 850nm obtained for the photodetector prepared at 1.5mol. the Specific Detectivity (D*) showed two peaks in the Spectrum of the Specific Detectivity, Quantum Efficiency (η) was calculated and The minority carriers of the photodetector was measured, and the length of diffusion carriers was calculated..

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