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Theory of Mitigate Temperature Effect on the Equilibrium Point in Vertical Cavity Surface Emitting Lasers | ||
| Kirkuk Journal of Science | ||
| Article 1, Volume 14, Issue 2, 2019, Pages 53-71 PDF (1.39 M) | ||
| Document Type: Research Paper | ||
| DOI: 10.32894/kujss.2019.14.2.4 | ||
| Author | ||
| Hisham K. Hisham* | ||
| Department of Electrical Engineering, College of Engineering,University of Basrah, Basra, Iraq. | ||
| Abstract | ||
| This paper presents a way to mitigate the influence of temperature effects on the equilibrium point (Q-point) of vertical cavity surface emitting lasers (VCSELs) by investigating the effect of laser injection current (Iinj) and dc-bias level (Ibias) numerically using MATHCAD software. Results show that, by changing temperature 50 oC (i.e. from 10 to 60) with Iinj = 3Ith and Ibias = 0, the photons density (P(t)) has decreased from 1.636 × 1016 cm-3 to 0.733 × 1016 cm-3, the carrier density (N(t)) has increased from 2.367 × 1018 cm-3 to 2.669 × 1018 cm-3 and the laser output power (Pout) has decreased from the 2.366 mW to the 1.025 mW. In contrast, by increasing the Iinj from 3Ith to 5Ith and the Ibias from 0 to 1.5Ith, the rate of the decreasing in the P(t) and in the Pout have reduced more than 25%. %25. | ||
| Keywords | ||
| Equilibrium point; semiconductor lasers; vertical cavity surface emitting lasers; temperature effect | ||
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