Morphological and Optical Properties of Porous Silicon

Mohammed, Mohammed S.; Shlaga, Ruqaya A.

doi:10.30684/etj.37.1B.3

	Morphological and Optical Properties of Porous Silicon
Engineering and Technology Journal
Article 3, Volume 37, 1B, 2019, Pages 17-20 PDF (784.06 K)
Document Type: Research Paper
DOI: 10.30684/etj.37.1B.3
Authors
Mohammed S. Mohammed; Ruqaya A. Shlaga
Department of Applied Sciences, The University of Technology, Baghdad - Iraq
Abstract
In this work photo-electrochemical etching was used to synthesize uniform and non-uniform macro porous silicon from n-type with orientation (100). Specimens were anodized in a sol of 25% HF: C2H2OH at 1:1 rate. Morphology and porosity of the samples were studied. Optical characteristics (reflection and photoluminescence) of PS samples by changing current density (10, 12, 14 and 16 mA/cm2 ) for fixed etching time (8min) and power density (17mW/cm2 ) by using red laser illumination wavelength (645nm) were investigated. Porous silicon samples imaged via scanning electron microscope (SEM), which showed the topography of silicon surface and pores distribution.
Keywords
photo-electrochemical etching; porous silicon (PS); SEM; PL; Reflection

References
[1] N. Purnima, “Photoelectrochemical Etching of Isolated, High Aspect Ratio Microstructures in n-Type Silicon (100),” MSc. Thesis, Department of Chemical Engineering by, University of Mumbai, 2011. [2] U.M. Nayef and M.W. Muayad, “Typical of Morphological Properties of Porous Silicon,” International Journal of Basic and Applied Sciences IJBAS-IJENS Vol.13, No.02, 2013. [3] J. Torres, H.M. Martinez, J.E. Alfonso and L.D. Lopez C, “Optoelectronic study in porous silicon thin films,” Microelectronics Journal, 39, 3-4, P.482-484, 2008. [4] P. Vitanov, M. Kamenova, N. Tyutyundzhiev, and V. Gantcheva, “Application of porous silicon layer in photovoltaic devices,” Thin solid films, Vol. 297, P.299-303, 1997. [5] W.A. Badawy, “Porous Silicon Modified Photovoltaic Junctions: An Approach to HighEfficiency Solar Cells,” AIP Conf. Proc., Vol. 14, No.8, P.29-35, 2007. [6] Ph. M. Fauchet and S. Member, IEEE, “Progress Toward Nanoscale Silicon Light Emitters,” IEEE Journal of selected topics in quantum electronics, Vol. 4, No. 6, P.1020-1028, 1998. [7] P.G. Han, H. Wong, Andy H.P. Chan and M.C. Poon, “Formation Mechanism of Light-emitting Porous Silicon Prepared by Reactive Ions Etching,” 0-7803- 3166-4/96/$5.00© 1996 IEEE, 1996. [8] K. Tsujino, M. Matsumura, Y. Nishimoto, “Texturization of ulticrystalline silicon wafers for solar cells by chemical treatment using metallic catalyst,” Sol. Ene. Mater. & Solar Cells, Vol. 90, P.100–110, 2006. [9] L.T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett. 57, 10, 1046, 2006. [10] F. Alfeel, F. Awad, I. Alghoraibi and F. Qamar, “Using AFM to Determine the Porosity in Porous Silicon,” Journal of Materials Science and Engineering, p. 579-583, 2012. [11] S. Mohammed and A.H. Shnieshil, “Characteristics Study of Porous Silicon Produced by Electrochemical Etching technique,” International Journal of Application or Innovation in Engineering and Management, Vol. 2, Issue 9, 2013. [12] G. Wang, Sh. Fu. Y. Ye Li, and Q. Duanmu “Optimization of macropore silicon morphology etched by photo-electrochemistry,” Solid-State and IntegratedCircuit Technology, 2008. ICSICT 2008. 9th International Conference on. IEEE, 2008. [13] R.G. Kadhim, R.A Ismail, M. Abdulridha, “Structural, Morphological, Chemical and Optical Properties of Porous Silicon Prepared By Electrochemical Etching,” International Journal of Thin Films Science and Technology, 2015. [14] A.M. Alwan, A.J. Haider and A.A. Jabbar, “Modifying and fine controlling of sliver nanoparticle nucleation sites and SERS performance by double silicon etching process,” Plasmonics, 2017.
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