Synthesis of Porous Silicon by Electrochemical Etching for Gas Sensor Application

Jwied, Duha H.; Nayef, Uday M.; Mutlak, Falah AH

doi:10.30684/etj.v40i4.2064

	Synthesis of Porous Silicon by Electrochemical Etching for Gas Sensor Application
Engineering and Technology Journal
Article 5, Volume 40, Issue 4, 2022, Pages 555-562 PDF (847.81 K)
Document Type: Research Paper
DOI: 10.30684/etj.v40i4.2064
Authors
Duha H. Jwied^* ¹; Uday M. Nayef¹; Falah AH Mutlak²
¹Applied Sciences Dept., University of Technology-Iraq, Alsina’a street, 10066 Baghdad, Iraq.
²College of Science, University of Baghdad, Baghdad, Iraq
Abstract
In the present study, the layers of porous Silicon (PS) have been produced from the p-type Silicon with a (100) orientation using the approach of electrochemical etching. The samples were anodized in a solution of HF concentration 18% and 99% C₂H₂OH. Samples characteristics of PS were studied by etching time constant (15 min). In addition, the alteration of the current density value into (5, 10,15,20, and 25) mA/ cm² was also studied. Samples were characterized by nanocrystalline porous Silicon via X-Ray Diffraction (XRD). The AFM (Atomic force microscope) analysis of PS shows the sponge-like structure. Also, a 39.76 nm average diameter was coordinated in the rod-like temperature variation, fabricated from prepared samples on the sensor's sensitivity, recovery time, and response time. The maximal level of the sensitivity has been approximately (20,11)% for porous Silicon of gas NO₂ and NH_3, respectively.
Highlights
Preparation of porous Silicon (PS) by photo-electrochemical etching method. Study of structural, morphological, and electrical properties for porous Silicon. Fabrication of Al/PS/Si/Al as gases sensor.
Keywords
porous silicon; Electrochemical etching method; X-Ray Diffraction; Gas Sensor

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