A Simulation Study on the Effect of the Thickness and Carrier Concentration of the Active Layers in the n-CdSe/p-CdSe Solar Cell

Abdul Ameer, Maha Khalid; Al Taan, Laith M.

doi:10.33899/rjs.2022.176070

	A Simulation Study on the Effect of the Thickness and Carrier Concentration of the Active Layers in the n-CdSe/p-CdSe Solar Cell
Rafidain Journal of Science
Article 4, Volume 31, Issue 4, 2022, Pages 29-38 PDF (627.29 K)
Document Type: Research Paper
DOI: 10.33899/rjs.2022.176070
Authors
Maha Khalid Abdul Ameer^* ¹; Laith M. Al Taan²
¹Department of physics/ College of Science/ University of Mosul
²Department of Physics/ College of Science/ University of Mosul
Abstract
In this work, thin-film solar cells based on Cadmium Selenide (CdSe) film were used, due to the low manufacturing cost and superior electronic properties, and this type of cell also achieves appropriate efficiency. The current work will focus on investigating the effect of the thickness and carrier concentration of the active layers in the cell, and the thickness of the window on the performance of the proposed solar cell, using the one-dimension solar cells capacitance simulation SCAPS-1D computer program. The proposed structure of this cell consists of ITO/n-CdSe/p-CdSe/Pt, where ITO was used as a window layer, n-CdSe as a buffer layer, p-CdSe as an absorber layer, and platinum Pt as a back conductive electrode. The results revealed that the cell performed best at thicknesses of 5000 and 100nm for the absorber and buffer layers, respectively, and with carrier concentrations of 10¹⁶ and 10¹⁷cm^-3for the same layers. The optimal window layer thickness is 100nm. These variables yield open circuit voltage (V_OC), short circuit current density (J_SC), fill factor (FF) of 1.0845 V, 20.87 mA/cm², 88.02% respectively, while the conversion efficiency of cell (Eff.) was obtained, which is 19.92%.
Keywords
CdSe; thickness impact; carrier concentration impact. SCAPS

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