Khalid, Z., AmmarM, .., Ammar, H. (2007). Study on Temperature and Etching Effects on Silicon Oxide Formation Using Laser Ellipsometric Method. , 25(6), 797-807. doi: 10.30684/etj.25.6.8
Z. Yahiya Khalid; . Al-Baldawi AmmarM; H. Jraiz Ammar. "Study on Temperature and Etching Effects on Silicon Oxide Formation Using Laser Ellipsometric Method". , 25, 6, 2007, 797-807. doi: 10.30684/etj.25.6.8
Khalid, Z., AmmarM, .., Ammar, H. (2007). 'Study on Temperature and Etching Effects on Silicon Oxide Formation Using Laser Ellipsometric Method', , 25(6), pp. 797-807. doi: 10.30684/etj.25.6.8
Khalid, Z., AmmarM, .., Ammar, H. Study on Temperature and Etching Effects on Silicon Oxide Formation Using Laser Ellipsometric Method. , 2007; 25(6): 797-807. doi: 10.30684/etj.25.6.8

Study on Temperature and Etching Effects on Silicon Oxide Formation Using Laser Ellipsometric Method

Engineering and Technology Journal
Volume 25, Issue 6, 2007, Pages 797-807    PDF (162.42 K)
DOI: 10.30684/etj.25.6.8
Authors
Z. Yahiya Khalid; . Al-Baldawi AmmarM; H. Jraiz Ammar
Abstract
In this paper, a laser ellipsometric method is implemented to study the
formation of oxide films on silicon substrate at room temperature in air. Two
lasers, He-Ne and semiconductor diode, as well as a tungsten halogen lamp,
were used as a light source in this method to show the importance of
coherency for accurate results. The thickness of oxide layer was measured and
the results is compared with that calculated for a monolayer of oxide.
Behavior of thermally formed oxides was studied using ellipsometry to
determine polarizer angle as a function of etching time.
Keywords
Native Oxides; Ellipsometry; Silicon Devices; Laser Polarization
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