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Study of Electrical Properties of p-PbSe/p-Si Heterojunction | ||
| Engineering and Technology Journal | ||
| Volume 25, Issue 5, 2007, Pages 690-695 PDF (124.9 K) | ||
| DOI: 10.30684/etj.25.5.9 | ||
| Author | ||
| Uday Muhsin Nayef | ||
| Abstract | ||
| Electrical properties of p-PbSe/p-Si heterojunction detector have been investigated. The electrical properties under dark condition show a rectifying behaviour with low rectification factor, and exhibits soft breakdown reverse current. C-V characteristics suggest that the fabricated diode was abrupt type, built in potential determined by extrapolation from 1/C2-V curve to the point (V=0) and it was equal to (0.49V). Results of I-V characteristics under illumination conditions with reverse bias voltage exhibit linear behavior with no saturation limit. | ||
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