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Photonic Devices Based on Porous Silicon Layers | ||
| Engineering and Technology Journal | ||
| Volume 25, Issue 5, 2007, Pages 696-701 PDF (130.83 K) | ||
| DOI: 10.30684/etj.25.5.10 | ||
| Author | ||
| Uday Muhsin Nayef | ||
| Abstract | ||
| The optoelectronic properties of (Al/c-Si) and sandwich structure type (Al/PS/c-Si/Al) were reported. The nanostructure porous silicon is obtained by photochemical etching without applying electric field. The photosensitivity of (Al/PS/c-Si/Al) structure is determined by porous layer photoconduction. Maximum spectral sensitivity of the porous layer is changed from (575- 610)nm depending on preparation condition. | ||
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