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Normalized Characteristics of Laser-Induced Diffusion of Arsenic Dopants in Silicon | ||
| Engineering and Technology Journal | ||
| Volume 25, Issue 4, 2007, Pages 584-590 PDF (170.17 K) | ||
| DOI: 10.30684/etj.25.4.6 | ||
| Authors | ||
| Oday A. Hamadi; Salma M. Hussain | ||
| Abstract | ||
| In this work, normalized characteristics of laser-induced diffusion of arsenic in silicon are presented. These characteristics are considered as are enhancing the As-doped silicon-based devices. This enhancement is attributed to the increasing in the diffusion length within a certain layer of the active region in the device. Laser-induced diffusion is a perfect technique for improving the characteristics of electronic devices because it is flexible, contactless, clean and well controlled. | ||
| Keywords | ||
| Laser-induced diffusion; Arsenic-doped silicon; Transistor current gain | ||
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